| Компонент | Описание | Производитель | PDF | Buy |
| HB15161 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers |  |  |
| HC15161 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers | | |
| 0022415161 | 2.54mm (.100") KK^ IDT Double Cantilever Contact, 16 Circuits, Tin (Sn), Feed-Through, 26 Stranded or Solid, and 28 Solid, Stranded, or Fused, Brown ID Strip | Molex Electronics Ltd. | | |
| 06151610 | tyco electronics contents | Tyco Electronics | | |
| 0923151610 | Picoflex PF-50 IDT-to-IDT, 16 Circuits, 0.10m (3.94") Length | Molex Electronics Ltd. | | |
| 06151611 | tyco electronics contents | Tyco Electronics | | |
| K4E151611 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| MAL215161101E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | | |
| MAL215161109E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | | |
| 0471516112 | 0.50mm (.020") Pitch HDMI Receptacle, Right Angle, 0.76um (30u") Gold (Au) Plating, Front Solder Tab Length | Molex Electronics Ltd. | | |
| K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | | |
| EPI151611G4036L | Contents Surface Mount Power Inductor | PCA ELECTRONICS INC. | | |
